Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1−xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.