Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics

A resistive switching (RS) random access memory device with ZrO{sub 2}-doped HfO{sub 2} exhibits better RS performance than that with pure HfO{sub 2}. In particular, I{sub res}, V{sub res}, and V{sub set} are reduced by approximately 58%, 38%, and 39%, respectively, when HfO{sub 2} is doped with ZrO...

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Veröffentlicht in:	Applied physics letters 2014-08, Vol.105 (7)
Hauptverfasser:	Ryu, Seung Wook, Kwac, Jungsuk, Nishi, Yoshio, Cho, Seongjae, Park, Joonsuk, Kim, Hyeong Joon
Format:	Artikel
Sprache:	eng
Schlagworte:	CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DISTRIBUTION DOPED MATERIALS ELECTRIC CONDUCTIVITY HAFNIUM OXIDES MEMORY DEVICES RANDOMNESS SWITCHES TRANSMISSION ELECTRON MICROSCOPY X-RAY PHOTOELECTRON SPECTROSCOPY ZIRCONIUM OXIDES
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