Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and an...

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Veröffentlicht in:Journal of applied physics 2014-07, Vol.116 (1)
Hauptverfasser: Mala, S. A., Tsybeskov, L., Lockwood, D. J., Wu, X., Baribeau, J.-M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Chemical composition
COOLING
ENERGY LOSSES
Germanium
GERMANIUM SILICIDES
HEAT TRANSFER
LAYERS
NANOSCIENCE AND NANOTECHNOLOGY
Nanostructure
NANOSTRUCTURES
Organic chemistry
Quantitative analysis
RAMAN EFFECT
Raman spectra
SILICON
Silicon germanides
Strain analysis
STRAINS
THERMAL DIFFUSIVITY
THERMAL EFFLUENTS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4886598