Engineering of optical polarization based on electronic band structures of A -plane ZnO layers under biaxial strains

In-plane anisotropic strains in A-plane layers on the electronic band structure of ZnO were investigated from the viewpoint of optical polarization anisotropy. Investigations utilizing k·p perturbation theory revealed that energy transitions and associated oscillation strengths were dependent on in-plane strains. The theoretical correlation between optical polarizations and in-plane strains was experimentally demonstrated using A-plane ZnO layers with different in-plane strains. Finally, optical polarization anisotropy and its implications for in-plane optical properties are discussed in relation to the energy shift between two orthogonal directions. Higher polarization rotations were obtained in an A-plane ZnO layer with in-plane biaxially compressive strains as compared to strain-free ZnO. This study provides detailed information concerning the role played by in-plane strains in optically polarized applications based on nonpolar ZnO in the ultra-violet region.