Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably th...
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Veröffentlicht in: | Applied physics letters 2014-07, Vol.105 (1) |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4887349 |