Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably th...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (1)
Hauptverfasser: de Coux, P., Bachelet, R., Warot-Fonrose, B., Skumryev, V., Lupina, L., Niu, G., Schroeder, T., Fontcuberta, J., Sánchez, F.
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Sprache:eng
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Zusammenfassung:A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4887349