Phase coherent transport in hollow InAs nanowires

Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electron...

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Veröffentlicht in:	Applied physics letters 2014-09, Vol.105 (11)
Hauptverfasser:	Wenz, T., Rosien, M., Haas, F., Rieger, T., Demarina, N., Lepsa, M. I., Lüth, H., Grützmacher, D., Schäpers, Th
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chemical etching Cryogenic temperature Electrical resistivity Electron states ETCHING GALLIUM ARSENIDES INDIUM ARSENIDES MAGNETIC FIELDS NANOSCIENCE AND NANOTECHNOLOGY NANOWIRES Organic chemistry OSCILLATIONS PERIODICITY Quantum transport QUANTUM WIRES Resistance TEMPERATURE RANGE 0273-0400 K
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Beschreibung
Zusammenfassung:	Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4896286