Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In2O3-SnO2 (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm2/V s with off current values lower than 10−11A. The...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (1)
Hauptverfasser: Chung, Yoon Jang, Kim, Un Ki, Hwang, Eun Suk, Hwang, Cheol Seong
Format: Artikel
Sprache:eng
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Zusammenfassung:Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In2O3-SnO2 (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm2/V s with off current values lower than 10−11A. The ITO layer also acted as a hole filter layer, and hole current and threshold voltage shift values measured under negative bias illumination conditions showed that a significant amount of photo-generated charge carriers were annihilated before reaching the gate insulator. This effect was more evident at larger intensities, showing threshold voltage shift values reduced by more than ∼70% under stress conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4889856