Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open th...

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