Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open th...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (1)
Hauptverfasser: Dong, Q., Liang, Y. X., Ferry, D., Cavanna, A., Gennser, U., Couraud, L., Jin, Y.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current leakage
ELECTRIC POTENTIAL
ELECTRON MOBILITY
Electronics
Gates
High electron mobility transistors
IMPEDANCE
LEAKAGE CURRENT
Low noise
NOISE
READOUT SYSTEMS
Semiconductor devices
TEMPERATURE RANGE 0000-0013 K
TRANSISTORS
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Zusammenfassung:We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4887368