Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM...

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Veröffentlicht in:	Applied physics letters 2014-07, Vol.105 (1)
Hauptverfasser:	Portier, Benjamin, Vest, Benjamin, Pardo, Fabrice, Péré-Laperne, Nicolas, Steveler, Emilie, Jaeck, Julien, Dupuis, Christophe, Bardou, Nathalie, Lemaître, Aristide, Rosencher, Emmanuel, Haïdar, Riad, Pelouard, Jean-Luc
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION Applied physics Arsenides Computer simulation COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dependence ELECTRIC FIELDS Engineering Sciences GAIN Gallium arsenide GALLIUM ARSENIDES GOLD INCIDENCE ANGLE INTERFACES LAYERS NANOSCIENCE AND NANOTECHNOLOGY Nanostructure NANOSTRUCTURES Optics P-N JUNCTIONS Photoelectric effect Photoelectric emission Photon absorption Photonic PHOTONS Polarized light RESONATORS Silicon VISIBLE RADIATION
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