Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM...

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Veröffentlicht in:Applied physics letters 2014-07, Vol.105 (1)
Hauptverfasser: Portier, Benjamin, Vest, Benjamin, Pardo, Fabrice, Péré-Laperne, Nicolas, Steveler, Emilie, Jaeck, Julien, Dupuis, Christophe, Bardou, Nathalie, Lemaître, Aristide, Rosencher, Emmanuel, Haïdar, Riad, Pelouard, Jean-Luc
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Sprache:eng
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Zusammenfassung:Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4887375