Lateral photoconductivity in structures with Ge/Si quantum dots

The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground stat...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2013-12, Vol.47 (12), p.1574-1577
Hauptverfasser:	Panevin, V. Yu, Sofronov, A. N., Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., Vinnichenko, M. Ya, Balagula, R. M., Tonkikh, A. A., Werner, P., Fuhrman, B., Schmidt, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	2013 (Continuation) ABSORPTION BOUND STATE GROUND STATES Magnetic Materials Magnetism March MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY Nizhni Novgorod PHOTOCONDUCTIVITY Physics Physics and Astronomy POLARIZATION QUANTUM DOTS SPECTRA SURFACES Symposium “Nanophysics and Nanoelectronics”
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Zusammenfassung:	The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782613120154