Lasing in microdisks of ultrasmall diameter

It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 μm. In 1-μm cavities, lasing occurs at the wavelength of one o...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-12, Vol.48 (12), p.1626-1630
Hauptverfasser:	Zhukov, A. E., Kryzhanovskaya, N. V., Maximov, M. V., Lipovskii, A. A., Savelyev, A. V., Bogdanov, A. A., Shostak, I. I., Moiseev, E. I., Karpov, D. V., Laukkanen, J., Tommila, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	EXCITED STATES GALLIUM ARSENIDES GROUND STATES INDIUM ARSENIDES LANTHANUM SELENIDES Lasers Low-Dimensional Systems Magnetic Materials Magnetism MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY Physics Physics and Astronomy QUANTUM DOTS Quantum Phenomena Semiconductor Structures WAVELENGTHS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 μm. In 1-μm cavities, lasing occurs at the wavelength of one of the whispering-gallery modes within the band corresponding to the first excited-state optical transition.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782614120240