Indium arsenide nanowire field-effect transistors for pH and biological sensing
Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a char...
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Veröffentlicht in: | Applied physics letters 2014-05, Vol.104 (20) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4878659 |