Indium arsenide nanowire field-effect transistors for pH and biological sensing

Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a char...

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Veröffentlicht in:Applied physics letters 2014-05, Vol.104 (20)
Hauptverfasser: Upadhyay, S., Frederiksen, R., Lloret, N., De Vico, L., Krogstrup, P., Jensen, J. H., Martinez, K. L., Nygård, J.
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Sprache:eng
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Zusammenfassung:Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4878659