Examination of hot-carrier stress induced degradation on fin field-effect transistor

Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH...

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Veröffentlicht in:	Applied physics letters 2014-02, Vol.104 (8), p.83505
Hauptverfasser:	Yang, Yi-Lin, Zhang, Wenqi, Yen, Tzu-Sung, Hong, Jia-Jian, Wong, Jie-Chen, Ku, Chao-Chen, Wu, Tai-Hsuan, Wang, Tzuo-Li, Li, Chien-Yi, Wu, Bing-Tze, Lin, Shih-Hung, Yeh, Wen-Kuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current leakage Degradation ELECTRIC POTENTIAL ELECTRONS FIELD EFFECT TRANSISTORS Gates INTERFACES IONIZATION LEAKAGE CURRENT Semiconductor devices STRESSES SUBSTRATES Threshold voltage Transistors TRAPPING
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