Examination of hot-carrier stress induced degradation on fin field-effect transistor

Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current.