Examination of hot-carrier stress induced degradation on fin field-effect transistor
Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (8), p.83505 |
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| container_title | Applied physics letters |
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| creator | Yang, Yi-Lin Zhang, Wenqi Yen, Tzu-Sung Hong, Jia-Jian Wong, Jie-Chen Ku, Chao-Chen Wu, Tai-Hsuan Wang, Tzuo-Li Li, Chien-Yi Wu, Bing-Tze Lin, Shih-Hung Yeh, Wen-Kuan |
| description | Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current. |
| doi_str_mv | 10.1063/1.4866437 |
| format | Article |
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The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4866437</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CARRIERS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current leakage ; Degradation ; ELECTRIC POTENTIAL ; ELECTRONS ; FIELD EFFECT TRANSISTORS ; Gates ; INTERFACES ; IONIZATION ; LEAKAGE CURRENT ; Semiconductor devices ; STRESSES ; SUBSTRATES ; Threshold voltage ; Transistors ; TRAPPING</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (8), p.83505</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-c01cc72ecd2d7dbdfd065c10cce633a66b62e5cd08fd08034b4c17a85b2504ab3</citedby><cites>FETCH-LOGICAL-c285t-c01cc72ecd2d7dbdfd065c10cce633a66b62e5cd08fd08034b4c17a85b2504ab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22293112$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Yi-Lin</creatorcontrib><creatorcontrib>Zhang, Wenqi</creatorcontrib><creatorcontrib>Yen, Tzu-Sung</creatorcontrib><creatorcontrib>Hong, Jia-Jian</creatorcontrib><creatorcontrib>Wong, Jie-Chen</creatorcontrib><creatorcontrib>Ku, Chao-Chen</creatorcontrib><creatorcontrib>Wu, Tai-Hsuan</creatorcontrib><creatorcontrib>Wang, Tzuo-Li</creatorcontrib><creatorcontrib>Li, Chien-Yi</creatorcontrib><creatorcontrib>Wu, Bing-Tze</creatorcontrib><creatorcontrib>Lin, Shih-Hung</creatorcontrib><creatorcontrib>Yeh, Wen-Kuan</creatorcontrib><title>Examination of hot-carrier stress induced degradation on fin field-effect transistor</title><title>Applied physics letters</title><description>Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current.</description><subject>Applied physics</subject><subject>CARRIERS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current leakage</subject><subject>Degradation</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRONS</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>Gates</subject><subject>INTERFACES</subject><subject>IONIZATION</subject><subject>LEAKAGE CURRENT</subject><subject>Semiconductor devices</subject><subject>STRESSES</subject><subject>SUBSTRATES</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>TRAPPING</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKsH_8GCJw9b87FJtkcp9QMKXuo5ZCeJTWmTmmRB_70pLXgYhuF9mHnnReie4BnBgj2RWdcL0TF5gSYES9kyQvpLNMEYs1bMOblGNzlv68gpYxO0Xv7ovQ-6-Bia6JpNLC3olLxNTS7J5tz4YEawpjH2K2lzJkPj_LHszrTWOQulKUmH7HOJ6RZdOb3L9u7cp-jzZblevLWrj9f3xfOqBdrzegcTAEktGGqkGYwzWHAgGMAKxrQQg6CWg8F9VXrMuqEDInXPB8pxpwc2RQ-nvTEXrzL4YmEDMYRqR1FK5_V5-k8dUvwebS5qG8cUqjFFCZWyw4ywSj2eKEgx52SdOiS_1-lXEayO0SqiztGyP30VayU</recordid><startdate>20140224</startdate><enddate>20140224</enddate><creator>Yang, Yi-Lin</creator><creator>Zhang, Wenqi</creator><creator>Yen, Tzu-Sung</creator><creator>Hong, Jia-Jian</creator><creator>Wong, Jie-Chen</creator><creator>Ku, Chao-Chen</creator><creator>Wu, Tai-Hsuan</creator><creator>Wang, Tzuo-Li</creator><creator>Li, Chien-Yi</creator><creator>Wu, Bing-Tze</creator><creator>Lin, Shih-Hung</creator><creator>Yeh, Wen-Kuan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140224</creationdate><title>Examination of hot-carrier stress induced degradation on fin field-effect transistor</title><author>Yang, Yi-Lin ; Zhang, Wenqi ; Yen, Tzu-Sung ; Hong, Jia-Jian ; Wong, Jie-Chen ; Ku, Chao-Chen ; Wu, Tai-Hsuan ; Wang, Tzuo-Li ; Li, Chien-Yi ; Wu, Bing-Tze ; Lin, Shih-Hung ; Yeh, Wen-Kuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-c01cc72ecd2d7dbdfd065c10cce633a66b62e5cd08fd08034b4c17a85b2504ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CARRIERS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current leakage</topic><topic>Degradation</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRONS</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>Gates</topic><topic>INTERFACES</topic><topic>IONIZATION</topic><topic>LEAKAGE CURRENT</topic><topic>Semiconductor devices</topic><topic>STRESSES</topic><topic>SUBSTRATES</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>TRAPPING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Yi-Lin</creatorcontrib><creatorcontrib>Zhang, Wenqi</creatorcontrib><creatorcontrib>Yen, Tzu-Sung</creatorcontrib><creatorcontrib>Hong, Jia-Jian</creatorcontrib><creatorcontrib>Wong, Jie-Chen</creatorcontrib><creatorcontrib>Ku, Chao-Chen</creatorcontrib><creatorcontrib>Wu, Tai-Hsuan</creatorcontrib><creatorcontrib>Wang, Tzuo-Li</creatorcontrib><creatorcontrib>Li, Chien-Yi</creatorcontrib><creatorcontrib>Wu, Bing-Tze</creatorcontrib><creatorcontrib>Lin, Shih-Hung</creatorcontrib><creatorcontrib>Yeh, Wen-Kuan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Yi-Lin</au><au>Zhang, Wenqi</au><au>Yen, Tzu-Sung</au><au>Hong, Jia-Jian</au><au>Wong, Jie-Chen</au><au>Ku, Chao-Chen</au><au>Wu, Tai-Hsuan</au><au>Wang, Tzuo-Li</au><au>Li, Chien-Yi</au><au>Wu, Bing-Tze</au><au>Lin, Shih-Hung</au><au>Yeh, Wen-Kuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Examination of hot-carrier stress induced degradation on fin field-effect transistor</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-24</date><risdate>2014</risdate><volume>104</volume><issue>8</issue><spage>83505</spage><pages>83505-</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Degradation in fin field-effect transistor devices was investigated in detail under various hot-carrier stress conditions. The threshold voltage (VTH) shift, substrate current (IB), and subthreshold swing were extracted to determine the degradation of a device. The power-law time exponent of the VTH shift was largest at VG = 0.3 VD, indicating that the VTH shift was dominated by interface state generation. Although the strongest impact ionization occurred at VG = VD, the VTH shift was mainly caused by electron trapping resulting from a large gate leakage current.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4866437</doi></addata></record> |
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| ispartof | Applied physics letters, 2014-02, Vol.104 (8), p.83505 |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics CARRIERS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current leakage Degradation ELECTRIC POTENTIAL ELECTRONS FIELD EFFECT TRANSISTORS Gates INTERFACES IONIZATION LEAKAGE CURRENT Semiconductor devices STRESSES SUBSTRATES Threshold voltage Transistors TRAPPING |
| title | Examination of hot-carrier stress induced degradation on fin field-effect transistor |
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