High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure
A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying...
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| Veröffentlicht in: | Applied physics letters 2014-02, Vol.104 (5) |
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| container_issue | 5 |
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| container_title | Applied physics letters |
| container_volume | 104 |
| creator | Hwan Lee, Seung Sup Choi, Min Lee, Jia Ho Ra, Chang Liu, Xiaochi Hwang, Euyheon Hee Choi, Jun Zhong, Jianqiang Chen, Wei Jong Yoo, Won |
| description | A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices. |
| doi_str_mv | 10.1063/1.4863840 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22283282</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127709033</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-2489243c0f0df8da058f718e41a1795be2d9997427382d8e3e662841a80e79283</originalsourceid><addsrcrecordid>eNpF0M9LwzAUB_AgCs7pwf-g4MlDt_xom-QoQ50w8KLnkKWvbWaX1CQV_e_t2MTT48v78OB9EboleEFwxZZkUYiKiQKfoRnBnOeMEHGOZhhjlleyJJfoKsbdFEvK2Ax9rG3bZQOExoe9dgayLwjJGt1naXQOeuvarLa-hpiN8RDaoIcOHCw7-Natd5Pc-uBd5mwKtoblH8g6SBB8HlMYTRoDXKOLRvcRbk5zjt6fHt9W63zz-vyyetjkhpUk5bQQkhbM4AbXjag1LkXDiYCCaMJluQVaSyl5QTkTtBbAoKqomLYCA5dUsDm6O971MVkVjU1gOuOnb0xSlE6CCvqvhuA_R4hJ7fwYpneiooRyjiVmbFL3R2WCjzFAo4Zg9zr8KILVoXFF1Klx9gvs3XK4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127709033</pqid></control><display><type>article</type><title>High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Hwan Lee, Seung ; Sup Choi, Min ; Lee, Jia ; Ho Ra, Chang ; Liu, Xiaochi ; Hwang, Euyheon ; Hee Choi, Jun ; Zhong, Jianqiang ; Chen, Wei ; Jong Yoo, Won</creator><creatorcontrib>Hwan Lee, Seung ; Sup Choi, Min ; Lee, Jia ; Ho Ra, Chang ; Liu, Xiaochi ; Hwang, Euyheon ; Hee Choi, Jun ; Zhong, Jianqiang ; Chen, Wei ; Jong Yoo, Won</creatorcontrib><description>A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4863840</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Boron nitride ; BORON NITRIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Diodes ; DOPED MATERIALS ; Electronic devices ; GRAPHENE ; HETEROJUNCTIONS ; HEXAGONAL LATTICES ; Insulators ; INTERFACES ; METALS ; NONLINEAR PROBLEMS ; Organic chemistry ; Rectifiers ; TUNNEL DIODES ; TUNNEL EFFECT</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (5)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-2489243c0f0df8da058f718e41a1795be2d9997427382d8e3e662841a80e79283</citedby><cites>FETCH-LOGICAL-c351t-2489243c0f0df8da058f718e41a1795be2d9997427382d8e3e662841a80e79283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22283282$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hwan Lee, Seung</creatorcontrib><creatorcontrib>Sup Choi, Min</creatorcontrib><creatorcontrib>Lee, Jia</creatorcontrib><creatorcontrib>Ho Ra, Chang</creatorcontrib><creatorcontrib>Liu, Xiaochi</creatorcontrib><creatorcontrib>Hwang, Euyheon</creatorcontrib><creatorcontrib>Hee Choi, Jun</creatorcontrib><creatorcontrib>Zhong, Jianqiang</creatorcontrib><creatorcontrib>Chen, Wei</creatorcontrib><creatorcontrib>Jong Yoo, Won</creatorcontrib><title>High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure</title><title>Applied physics letters</title><description>A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.</description><subject>Applied physics</subject><subject>Boron nitride</subject><subject>BORON NITRIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Diodes</subject><subject>DOPED MATERIALS</subject><subject>Electronic devices</subject><subject>GRAPHENE</subject><subject>HETEROJUNCTIONS</subject><subject>HEXAGONAL LATTICES</subject><subject>Insulators</subject><subject>INTERFACES</subject><subject>METALS</subject><subject>NONLINEAR PROBLEMS</subject><subject>Organic chemistry</subject><subject>Rectifiers</subject><subject>TUNNEL DIODES</subject><subject>TUNNEL EFFECT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpF0M9LwzAUB_AgCs7pwf-g4MlDt_xom-QoQ50w8KLnkKWvbWaX1CQV_e_t2MTT48v78OB9EboleEFwxZZkUYiKiQKfoRnBnOeMEHGOZhhjlleyJJfoKsbdFEvK2Ax9rG3bZQOExoe9dgayLwjJGt1naXQOeuvarLa-hpiN8RDaoIcOHCw7-Natd5Pc-uBd5mwKtoblH8g6SBB8HlMYTRoDXKOLRvcRbk5zjt6fHt9W63zz-vyyetjkhpUk5bQQkhbM4AbXjag1LkXDiYCCaMJluQVaSyl5QTkTtBbAoKqomLYCA5dUsDm6O971MVkVjU1gOuOnb0xSlE6CCvqvhuA_R4hJ7fwYpneiooRyjiVmbFL3R2WCjzFAo4Zg9zr8KILVoXFF1Klx9gvs3XK4</recordid><startdate>20140203</startdate><enddate>20140203</enddate><creator>Hwan Lee, Seung</creator><creator>Sup Choi, Min</creator><creator>Lee, Jia</creator><creator>Ho Ra, Chang</creator><creator>Liu, Xiaochi</creator><creator>Hwang, Euyheon</creator><creator>Hee Choi, Jun</creator><creator>Zhong, Jianqiang</creator><creator>Chen, Wei</creator><creator>Jong Yoo, Won</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140203</creationdate><title>High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure</title><author>Hwan Lee, Seung ; Sup Choi, Min ; Lee, Jia ; Ho Ra, Chang ; Liu, Xiaochi ; Hwang, Euyheon ; Hee Choi, Jun ; Zhong, Jianqiang ; Chen, Wei ; Jong Yoo, Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-2489243c0f0df8da058f718e41a1795be2d9997427382d8e3e662841a80e79283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Boron nitride</topic><topic>BORON NITRIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Diodes</topic><topic>DOPED MATERIALS</topic><topic>Electronic devices</topic><topic>GRAPHENE</topic><topic>HETEROJUNCTIONS</topic><topic>HEXAGONAL LATTICES</topic><topic>Insulators</topic><topic>INTERFACES</topic><topic>METALS</topic><topic>NONLINEAR PROBLEMS</topic><topic>Organic chemistry</topic><topic>Rectifiers</topic><topic>TUNNEL DIODES</topic><topic>TUNNEL EFFECT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hwan Lee, Seung</creatorcontrib><creatorcontrib>Sup Choi, Min</creatorcontrib><creatorcontrib>Lee, Jia</creatorcontrib><creatorcontrib>Ho Ra, Chang</creatorcontrib><creatorcontrib>Liu, Xiaochi</creatorcontrib><creatorcontrib>Hwang, Euyheon</creatorcontrib><creatorcontrib>Hee Choi, Jun</creatorcontrib><creatorcontrib>Zhong, Jianqiang</creatorcontrib><creatorcontrib>Chen, Wei</creatorcontrib><creatorcontrib>Jong Yoo, Won</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hwan Lee, Seung</au><au>Sup Choi, Min</au><au>Lee, Jia</au><au>Ho Ra, Chang</au><au>Liu, Xiaochi</au><au>Hwang, Euyheon</au><au>Hee Choi, Jun</au><au>Zhong, Jianqiang</au><au>Chen, Wei</au><au>Jong Yoo, Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-03</date><risdate>2014</risdate><volume>104</volume><issue>5</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4863840</doi></addata></record> |
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| subjects | Applied physics Boron nitride BORON NITRIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Diodes DOPED MATERIALS Electronic devices GRAPHENE HETEROJUNCTIONS HEXAGONAL LATTICES Insulators INTERFACES METALS NONLINEAR PROBLEMS Organic chemistry Rectifiers TUNNEL DIODES TUNNEL EFFECT |
| title | High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T12%3A04%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20performance%20vertical%20tunneling%20diodes%20using%20graphene/hexagonal%20boron%20nitride/graphene%20hetero-structure&rft.jtitle=Applied%20physics%20letters&rft.au=Hwan%20Lee,%20Seung&rft.date=2014-02-03&rft.volume=104&rft.issue=5&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4863840&rft_dat=%3Cproquest_osti_%3E2127709033%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2127709033&rft_id=info:pmid/&rfr_iscdi=true |