High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying...

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Veröffentlicht in:Applied physics letters 2014-02, Vol.104 (5)
Hauptverfasser: Hwan Lee, Seung, Sup Choi, Min, Lee, Jia, Ho Ra, Chang, Liu, Xiaochi, Hwang, Euyheon, Hee Choi, Jun, Zhong, Jianqiang, Chen, Wei, Jong Yoo, Won
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Sprache:eng
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Zusammenfassung:A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863840