Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nan...

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Veröffentlicht in:Applied physics letters 2014-03, Vol.104 (9), p.91108
Hauptverfasser: Stegmaier, M., Ebert, J., Meckbach, J. M., Ilin, K., Siegel, M., Pernice, W. H. P.
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Sprache:eng
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Zusammenfassung:Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4867529