High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons

High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1−xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at aroun...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (3)
Hauptverfasser: Ni, Pei-Nan, Shan, Chong-Xin, Li, Bing-Hui, Shen, De-Zhen
Format: Artikel
Sprache:eng
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Zusammenfassung:High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1−xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg0.51Zn0.49O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4862789