Si{sub 3}N{sub 4} optomechanical crystals in the resolved-sideband regime

Si{sub 3}N{sub 4} optomechanical crystals in the resolved-sideband regime

We demonstrate sideband-resolved Si{sub 3}N{sub 4} optomechanical crystals supporting 10{sup 5} quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at r...

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Veröffentlicht in:Applied physics letters 2014-01, Vol.104 (4)
Hauptverfasser: Davanço, M., Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, Ates, S., Liu, Y., Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, Srinivasan, K.
Format: Artikel
Sprache:eng
Schlagworte:
ABSORPTION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
OPACITY
OPTICAL MODES
PHOTONS
QUALITY FACTOR
SILICON NITRIDES
TEMPERATURE RANGE 0273-0400 K
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Zusammenfassung:We demonstrate sideband-resolved Si{sub 3}N{sub 4} optomechanical crystals supporting 10{sup 5} quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 10{sup 4}.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4858975