Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating s...

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Bibliographische Detailangaben
Hauptverfasser: Fukuhara, Mikio, Yoshida, Hajime
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Alloys
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COULOMB FIELD
CRYSTAL STRUCTURE
Diamonds
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FABRICATION
FIELD EFFECT TRANSISTORS
HYDROGEN ADDITIONS
METALLIC GLASSES
Nickel
NICKEL ALLOYS
NIOBIUM ALLOYS
NONLINEAR PROBLEMS
OSCILLATIONS
Room temperature
Semiconductor devices
TEMPERATURE RANGE 0273-0400 K
Transistors
Transport phenomena
Wiring
Zirconium
ZIRCONIUM ALLOYS
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Beschreibung
Zusammenfassung:We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4878309