Role of quantum confinement in luminescence efficiency of group IV nanostructures

Experimental results obtained previously for the photoluminescence efficiency (PLeff) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PLeff versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when EG∼(D2+D)−1. We identified that above D ≈ 6.2 nm: EG...

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Veröffentlicht in:Journal of applied physics 2014-01, Vol.115 (4)
Hauptverfasser: Barbagiovanni, E. G., Lockwood, D. J., Rowell, N. L., Costa Filho, R. N., Berbezier, I., Amiard, G., Favre, L., Ronda, A., Faustini, M., Grosso, D.
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Sprache:eng
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Zusammenfassung:Experimental results obtained previously for the photoluminescence efficiency (PLeff) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PLeff versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when EG∼(D2+D)−1. We identified that above D ≈ 6.2 nm: EG∼D−1 due to a changing effective mass (EM), while below D ≈ 4.6 nm: EG∼D−2 due to electron/hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small D.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4863397