Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Local magnetoresistance (MR) through silicon (Si) and its bias voltage (Vbias) (bias current (Ibias)) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing Vbias...

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Veröffentlicht in:Journal of applied physics 2014-05, Vol.115 (17)
Hauptverfasser: Saito, Y., Tanamoto, T., Ishikawa, M., Sugiyama, H., Inokuchi, T., Hamaya, K., Tezuka, N.
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Sprache:eng
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Zusammenfassung:Local magnetoresistance (MR) through silicon (Si) and its bias voltage (Vbias) (bias current (Ibias)) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing Vbias. This anomalous increase of local-MR as a function of Vbias can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4866699