Neutron irradiation effects on metal-gallium nitride contacts
We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemica...
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| Veröffentlicht in: | Journal of applied physics 2014-03, Vol.115 (12) |
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| container_title | Journal of applied physics |
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| creator | Katz, Evan J. Lin, Chung-Han Qiu, Jie Zhang, Zhichun Mishra, Umesh K. Cao, Lei Brillson, Leonard J. |
| description | We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation. |
| doi_str_mv | 10.1063/1.4869552 |
| format | Article |
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These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4869552</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Atomic force microscopy ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Contact resistance ; ELECTRIC CONDUCTIVITY ; Electric contacts ; EMISSION SPECTROSCOPY ; FAST NEUTRONS ; GALLIUM ; GALLIUM NITRIDES ; IRRADIATION ; NEUTRON FLUENCE ; Neutron irradiation ; Neutrons ; Organic chemistry ; Phase transitions ; Photoelectric emission ; PHOTOEMISSION ; PHYSICAL RADIATION EFFECTS ; SCANNING ELECTRON MICROSCOPY ; THERMAL NEUTRONS ; Transmission lines ; X ray spectra ; X-RAY SPECTROSCOPY</subject><ispartof>Journal of applied physics, 2014-03, Vol.115 (12)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-ceefcb15d9a39f3f9db3ee4332c233d1e203a732592b7bdb9360993a9879467f3</citedby><cites>FETCH-LOGICAL-c320t-ceefcb15d9a39f3f9db3ee4332c233d1e203a732592b7bdb9360993a9879467f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,27905,27906</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22271153$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Katz, Evan J.</creatorcontrib><creatorcontrib>Lin, Chung-Han</creatorcontrib><creatorcontrib>Qiu, Jie</creatorcontrib><creatorcontrib>Zhang, Zhichun</creatorcontrib><creatorcontrib>Mishra, Umesh K.</creatorcontrib><creatorcontrib>Cao, Lei</creatorcontrib><creatorcontrib>Brillson, Leonard J.</creatorcontrib><title>Neutron irradiation effects on metal-gallium nitride contacts</title><title>Journal of applied physics</title><description>We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.</description><subject>Applied physics</subject><subject>Atomic force microscopy</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Contact resistance</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electric contacts</subject><subject>EMISSION SPECTROSCOPY</subject><subject>FAST NEUTRONS</subject><subject>GALLIUM</subject><subject>GALLIUM NITRIDES</subject><subject>IRRADIATION</subject><subject>NEUTRON FLUENCE</subject><subject>Neutron irradiation</subject><subject>Neutrons</subject><subject>Organic chemistry</subject><subject>Phase transitions</subject><subject>Photoelectric emission</subject><subject>PHOTOEMISSION</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>THERMAL NEUTRONS</subject><subject>Transmission lines</subject><subject>X ray spectra</subject><subject>X-RAY SPECTROSCOPY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkDFPwzAQRi0EEqUw8A8iMTGk2L4mzg0MqKKAVMECs-U4Z3CVJsV2Bv49Rq3EdN_wdHp6jF0LvhC8hjuxWDY1VpU8YTPBGyxVVfFTNuNcirJBhefsIsYt50I0gDN2_0pTCuNQ-BBM503yeZNzZFMs8txRMn35afreT7ti8Cn4jgo7Dslk4pKdOdNHujreOftYP76vnsvN29PL6mFTWpA8lZbI2VZUHRpABw67FoiWANJKgE6Q5GAUyAplq9quRag5IhhsFC5r5WDObg5_x5i8jtYnsl9ZYsiaWkqphKjgn9qH8XuimPR2nMKQxbQUUtU5jMRM3R4oG8YYAzm9D35nwo8WXP811EIfG8Ivap1iFA</recordid><startdate>20140328</startdate><enddate>20140328</enddate><creator>Katz, Evan J.</creator><creator>Lin, Chung-Han</creator><creator>Qiu, Jie</creator><creator>Zhang, Zhichun</creator><creator>Mishra, Umesh K.</creator><creator>Cao, Lei</creator><creator>Brillson, Leonard J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140328</creationdate><title>Neutron irradiation effects on metal-gallium nitride contacts</title><author>Katz, Evan J. ; Lin, Chung-Han ; Qiu, Jie ; Zhang, Zhichun ; Mishra, Umesh K. ; Cao, Lei ; Brillson, Leonard J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-ceefcb15d9a39f3f9db3ee4332c233d1e203a732592b7bdb9360993a9879467f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>Atomic force microscopy</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Contact resistance</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>Electric contacts</topic><topic>EMISSION SPECTROSCOPY</topic><topic>FAST NEUTRONS</topic><topic>GALLIUM</topic><topic>GALLIUM NITRIDES</topic><topic>IRRADIATION</topic><topic>NEUTRON FLUENCE</topic><topic>Neutron irradiation</topic><topic>Neutrons</topic><topic>Organic chemistry</topic><topic>Phase transitions</topic><topic>Photoelectric emission</topic><topic>PHOTOEMISSION</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>THERMAL NEUTRONS</topic><topic>Transmission lines</topic><topic>X ray spectra</topic><topic>X-RAY SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Katz, Evan J.</creatorcontrib><creatorcontrib>Lin, Chung-Han</creatorcontrib><creatorcontrib>Qiu, Jie</creatorcontrib><creatorcontrib>Zhang, Zhichun</creatorcontrib><creatorcontrib>Mishra, Umesh K.</creatorcontrib><creatorcontrib>Cao, Lei</creatorcontrib><creatorcontrib>Brillson, Leonard J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Katz, Evan J.</au><au>Lin, Chung-Han</au><au>Qiu, Jie</au><au>Zhang, Zhichun</au><au>Mishra, Umesh K.</au><au>Cao, Lei</au><au>Brillson, Leonard J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Neutron irradiation effects on metal-gallium nitride contacts</atitle><jtitle>Journal of applied physics</jtitle><date>2014-03-28</date><risdate>2014</risdate><volume>115</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4869552</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2014-03, Vol.115 (12) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Atomic force microscopy CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Contact resistance ELECTRIC CONDUCTIVITY Electric contacts EMISSION SPECTROSCOPY FAST NEUTRONS GALLIUM GALLIUM NITRIDES IRRADIATION NEUTRON FLUENCE Neutron irradiation Neutrons Organic chemistry Phase transitions Photoelectric emission PHOTOEMISSION PHYSICAL RADIATION EFFECTS SCANNING ELECTRON MICROSCOPY THERMAL NEUTRONS Transmission lines X ray spectra X-RAY SPECTROSCOPY |
| title | Neutron irradiation effects on metal-gallium nitride contacts |
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