Neutron irradiation effects on metal-gallium nitride contacts
We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemica...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 2014-03, Vol.115 (12) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4869552 |