Investigation of gate leakage mechanism in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Investigation of gate leakage mechanism in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor high-electron-mobility transistors

The mechanism of both reverse and forward gate leakage currents in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN structures was studied in this Letter by temperature-dependent current-voltage measurement. Poole–Frenkel (PF) emission, an oxygen vacancy-assisted process, was deduced as the dominant...

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Veröffentlicht in:Applied physics letters 2014-04, Vol.104 (15)
Hauptverfasser: Zhu, Jie-Jie, Ma, Xiao-Hua, Hou, Bin, Chen, Wei-Wei, Hao, Yue, School of Microelectronics, Xidian University, Xi'an 710071
Format: Artikel
Sprache:eng
Schlagworte:
ACTIVATION ENERGY
ALUMINIUM OXIDES
ELECTRON MOBILITY
GALLIUM NITRIDES
LEAKAGE CURRENT
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
VACANCIES
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Zusammenfassung:The mechanism of both reverse and forward gate leakage currents in Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN structures was studied in this Letter by temperature-dependent current-voltage measurement. Poole–Frenkel (PF) emission, an oxygen vacancy-assisted process, was deduced as the dominant mechanism at high-temperatures (>388 K), and the leakage current at mid-temperatures (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4871802