Effects of atomic disorder on impact ionization rate in silicon nanodots

Effects of atomic disorder on impact ionization rate in silicon nanodots

We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher ene...

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Bibliographische Detailangaben
Hauptverfasser: Mori, N, Tomita, M, Minari, H, Watanabe, T, Koshida, N
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
INTERFACES
IONIZATION
QUANTUM DOTS
SILICA
SILICON
Silicon dioxide
SILICON OXIDES
THRESHOLD ENERGY
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Beschreibung
Zusammenfassung:We theoretically investigate effects of atomic disorder existing near the Si/SiO2 interfaces on the impact ionization rate of a Si nanodot (SiND). We find that the impact ionization rate of a disordered SiND becomes higher near the threshold energy and approaches that of an ideal SiND for higher energy region.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4848445