Transient and persistent current induced conductivity changes in GaAs/AlGaAs high-electron-mobility transistors

We report the observation of a current induced change of the low temperature conductivity of two-dimensional electron gases in GaAs/AlGaAs-high-electron-mobility transistors. By applying voltage pulses on the ohmic contacts of a Hall bar-mesa-structure, both sheet-carrier-density n2D and electron mo...

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Veröffentlicht in:	Applied physics letters 2014-03, Vol.104 (13)
Hauptverfasser:	Schulte-Braucks, Christian, Valentin, Sascha R., Ludwig, Arne, Wieck, Andreas D.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES Aluminum gallium arsenides Applied physics CARRIER DENSITY Contact resistance ELECTRON MOBILITY Electrons Energy levels Gallium arsenide GALLIUM ARSENIDES High electron mobility transistors MATERIALS SCIENCE Phenomenology Semiconductor devices TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0273-0400 K Thermal conductivity TRANSIENTS TRANSISTORS Voltage pulses
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