Transient and persistent current induced conductivity changes in GaAs/AlGaAs high-electron-mobility transistors
We report the observation of a current induced change of the low temperature conductivity of two-dimensional electron gases in GaAs/AlGaAs-high-electron-mobility transistors. By applying voltage pulses on the ohmic contacts of a Hall bar-mesa-structure, both sheet-carrier-density n2D and electron mo...
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Veröffentlicht in: | Applied physics letters 2014-03, Vol.104 (13) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report the observation of a current induced change of the low temperature conductivity of two-dimensional electron gases in GaAs/AlGaAs-high-electron-mobility transistors. By applying voltage pulses on the ohmic contacts of a Hall bar-mesa-structure, both sheet-carrier-density n2D and electron mobility μ are decreased. At temperatures below 50 K, a persistent change combined with a partial transient recovery of n2D has been observed. The transient behaviour and the lateral spreading of the effect are studied. Moreover, a temperature dependent investigation has been done in order to get insight into the addressed defect energy levels. A model based on the phenomenology of the effect is proposed. The observed effect is not a permanent degradation as the original carrier concentration can be restored by warming up the sample to room temperature and recooling it. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4870422 |