Trap states in AlGaN channel high-electron-mobility transistors

Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 1013 cm−2eV−1 at the energy of 0.33 eV to 4.35 × 1011 cm−2eV...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-11, Vol.103 (21)
Hauptverfasser: Zhao, ShengLei, Zhang, Kai, Ha, Wei, Chen, YongHe, Zhang, Peng, Zhang, JinCheng, Ma, XiaoHua, Hao, Yue
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Frequency dependent capacitance and conductance measurements were performed to analyze the trap states in the AlGaN channel high-electron-mobility transistors (HEMTs). The trap state density in the AlGaN channel HEMTs decreases from 1.26 × 1013 cm−2eV−1 at the energy of 0.33 eV to 4.35 × 1011 cm−2eV−1 at 0.40 eV. Compared with GaN channel HEMTs, the trap states in the AlGaN channel HEMTs have deeper energy levels. The trap with deeper energy levels in the AlGaN channel HEMTs is another reason for the reduction of the reverse gate leakage current besides the higher Schottky barrier height.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4832482