The electron-phonon relaxation time in thin superconducting titanium nitride films
We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 i...
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Veröffentlicht in: | Applied physics letters 2013-12, Vol.103 (25) |
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creator | Kardakova, A. Finkel, M. Morozov, D. Kovalyuk, V. An, P. Dunscombe, C. Tarkhov, M. Mauskopf, P. Klapwijk, T. M. Goltsman, G. |
description | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. |
doi_str_mv | 10.1063/1.4851235 |
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The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4851235</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Detectors ; ELECTRONS ; FERMI LEVEL ; Parameter estimation ; PHONONS ; RELAXATION TIME ; Superconductivity ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE ; Thin films ; TITANIUM ; Titanium nitride ; TITANIUM NITRIDES</subject><ispartof>Applied physics letters, 2013-12, Vol.103 (25)</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-c9c3bc885d5fd06dc9eb1129ad7d6692e9e92bb92211a3c505b5ed3dc0adfb5a3</citedby><cites>FETCH-LOGICAL-c353t-c9c3bc885d5fd06dc9eb1129ad7d6692e9e92bb92211a3c505b5ed3dc0adfb5a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,782,786,887,27931,27932</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22253712$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kardakova, A.</creatorcontrib><creatorcontrib>Finkel, M.</creatorcontrib><creatorcontrib>Morozov, D.</creatorcontrib><creatorcontrib>Kovalyuk, V.</creatorcontrib><creatorcontrib>An, P.</creatorcontrib><creatorcontrib>Dunscombe, C.</creatorcontrib><creatorcontrib>Tarkhov, M.</creatorcontrib><creatorcontrib>Mauskopf, P.</creatorcontrib><creatorcontrib>Klapwijk, T. M.</creatorcontrib><creatorcontrib>Goltsman, G.</creatorcontrib><title>The electron-phonon relaxation time in thin superconducting titanium nitride films</title><title>Applied physics letters</title><description>We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.</description><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Detectors</subject><subject>ELECTRONS</subject><subject>FERMI LEVEL</subject><subject>Parameter estimation</subject><subject>PHONONS</subject><subject>RELAXATION TIME</subject><subject>Superconductivity</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE</subject><subject>Thin films</subject><subject>TITANIUM</subject><subject>Titanium nitride</subject><subject>TITANIUM NITRIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFUU1LxDAQDaLgunrwHxS86KFrPjZtcxTxCxYEWc8hTaY2S5vUJAX990Z20cu8GebxmHkPoUuCVwRX7Jas1g0nlPEjtCC4rktGSHOMFhhjVlaCk1N0FuMuj5wytkBv2x4KGECn4F059d55VwQY1JdKNrfJjlDYjH0ucZ4gaO_MrJN1H3mZlLPzWDibgjVQdHYY4zk66dQQ4eKAS_T--LC9fy43r08v93ebUjPOUqmFZq1uGm54Z3BltICWECqUqU1VCQoCBG1bQSkhimmOecvBMKOxMl3LFVuiq72uj8nKqG0C3efrXH5GUko5q7MRS3S9Z03Bf84Qkxxt1DAMyoGfoyQ821ZxvBb_gn_UnZ-Dyz9ISmhdV1VDcWbd7Fk6-BgDdHIKdlThWxIsfzOQRB4yYD9zInjb</recordid><startdate>20131216</startdate><enddate>20131216</enddate><creator>Kardakova, A.</creator><creator>Finkel, M.</creator><creator>Morozov, D.</creator><creator>Kovalyuk, V.</creator><creator>An, P.</creator><creator>Dunscombe, C.</creator><creator>Tarkhov, M.</creator><creator>Mauskopf, P.</creator><creator>Klapwijk, T. M.</creator><creator>Goltsman, G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QQ</scope><scope>7U5</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>20131216</creationdate><title>The electron-phonon relaxation time in thin superconducting titanium nitride films</title><author>Kardakova, A. ; Finkel, M. ; Morozov, D. ; Kovalyuk, V. ; An, P. ; Dunscombe, C. ; Tarkhov, M. ; Mauskopf, P. ; Klapwijk, T. 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M.</au><au>Goltsman, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The electron-phonon relaxation time in thin superconducting titanium nitride films</atitle><jtitle>Applied physics letters</jtitle><date>2013-12-16</date><risdate>2013</risdate><volume>103</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4851235</doi><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Detectors ELECTRONS FERMI LEVEL Parameter estimation PHONONS RELAXATION TIME Superconductivity TEMPERATURE DEPENDENCE TEMPERATURE RANGE Thin films TITANIUM Titanium nitride TITANIUM NITRIDES |
title | The electron-phonon relaxation time in thin superconducting titanium nitride films |
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