The electron-phonon relaxation time in thin superconducting titanium nitride films

The electron-phonon relaxation time in thin superconducting titanium nitride films

We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 i...

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Veröffentlicht in:Applied physics letters 2013-12, Vol.103 (25)
Hauptverfasser: Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., Tarkhov, M., Mauskopf, P., Klapwijk, T. M., Goltsman, G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Detectors
ELECTRONS
FERMI LEVEL
Parameter estimation
PHONONS
RELAXATION TIME
Superconductivity
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
Thin films
TITANIUM
Titanium nitride
TITANIUM NITRIDES
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Zusammenfassung:We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4851235