Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also...

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Veröffentlicht in:Applied physics letters 2013-08, Vol.103 (7)
Hauptverfasser: Pandey, Sushil Kumar, Kumar Pandey, Saurabh, Awasthi, Vishnu, Gupta, M., Deshpande, U. P., Mukherjee, Shaibal
Format: Artikel
Sprache:eng
Schlagworte:
ANNEALING
ANTIMONY
ANTIMONY IONS
CONCENTRATION RATIO
DENSITY
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ION BEAMS
MATERIALS SCIENCE
NITROGEN COMPLEXES
P-N JUNCTIONS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES
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Zusammenfassung:Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818819