A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment
This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 1015 atoms/cm2 at an acceleration energy of...
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| Veröffentlicht in: | Applied physics letters 2013-09, Vol.103 (14) |
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| container_issue | 14 |
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| container_title | Applied physics letters |
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| creator | Ishijima, Tatsuo Nosaka, Kohei Tanaka, Yasunori Uesugi, Yoshihiko Goto, Yousuke Horibe, Hideo |
| description | This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 1015 atoms/cm2 at an acceleration energy of 70 keV; this resulted in fast removal rates of more than 1 μm/min. When the distance between multibubble microwave plasma and the photoresist film was increased by a few millimeters, the photoresist removal rates drastically decreased; this suggests that short-lived radicals such as OH affect high-speed photoresist removal. |
| doi_str_mv | 10.1063/1.4823530 |
| format | Article |
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| ispartof | Applied physics letters, 2013-09, Vol.103 (14) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ACCELERATION ATOMS DISTANCE DOSES KEV RANGE MATERIALS MATERIALS SCIENCE MICROWAVE RADIATION MIXTURES PLASMA PROCESSING RADICALS REMOVAL VELOCITY WATER |
| title | A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment |
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