Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10...

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Veröffentlicht in:Applied physics letters 2013-10, Vol.103 (18)
Hauptverfasser: Yoshida, Kyohei, Sonobe, Taro, Zen, Heishun, Hachiya, Kan, Okumura, Kensuke, Mishima, Kenta, Inukai, Motoharu, Negm, Hani, Torgasin, Konstantin, Omer, Mohamed, Kii, Toshiteru, Masuda, Kai, Ohgaki, Hideaki
Format: Artikel
Sprache:eng
Schlagworte:
ABSORPTION
Applied physics
BEAMS
Carbides
EXCITATION
Excitation spectra
HYDROGEN 6
Infrared lasers
IRRADIATION
Lasers
MATERIALS SCIENCE
MEV RANGE 100-1000
NEODYMIUM LASERS
PEAKS
PHONONS
PHOTONS
RAMAN EFFECT
Raman spectra
Semiconductor lasers
SEMICONDUCTOR MATERIALS
Silicon carbide
SILICON CARBIDES
SPECTROSCOPY
YAG lasers
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Beschreibung
Zusammenfassung:Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 μm). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4827253