Synthesis of fibrous reticulate nanocrystalline n-type MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5} thin films: Thermocooling applications

Graphical abstract: Ostwald ripening: If small nucleus is close to a larger crystal, ions formed by particle dissolution of smaller crystal incorporated into larger crystal, and film formation takes place by ion by ion condensation. Display Omitted Highlights: ► Arrested Precipitation Technique is a...

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Veröffentlicht in:Materials research bulletin 2012-11, Vol.47 (11)
Hauptverfasser: Salunkhe, Manauti M., Kharade, Rohini R., Kharade, Suvarta D., Mali, Sawanta S., Patil, P.S., Bhosale, P.N.
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Sprache:eng
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Zusammenfassung:Graphical abstract: Ostwald ripening: If small nucleus is close to a larger crystal, ions formed by particle dissolution of smaller crystal incorporated into larger crystal, and film formation takes place by ion by ion condensation. Display Omitted Highlights: ► Arrested Precipitation Technique is applied to deposit MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5}. ► X-ray diffraction confirms the proper phase formation of material. ► MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5} exhibits an n-type semiconducting behavior. ► Good thermoelectric performance suggests future fantasy. -- Abstract: In the present investigation n-type MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5} nanocrystalline thin films with various compositions of Se and Te were successfully deposited on ultrasonically cleaned glass substrates using recently developed Arrested Precipitation Technique (APT). The effect of composition on optical, morphological, structural, electrical and thermocooling properties of MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5} were investigated using UV–vis–NIR Spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffractometer, thermoelectric power and thermocooling measurements. Thermoelectric properties including electrical conductivity (σ), Seeback coefficient (S) and figure of merit (ZT) were measured at 300 K. Our aim is to investigate thermocooling behavior in respect of variation in composition of Se and Te in MoBi{sub 2}(Se{sub 1−x}Te{sub x}){sub 5} thin films along with optostructural and optoelectric properties.
ISSN:0025-5408
1873-4227
DOI:10.1016/J.MATERRESBULL.2012.08.026