(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. T...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2013-08, Vol.47 (8), p.1037-1040
Hauptverfasser:	Bouravleuv, A. D., Nevedomskii, V. N., Ubyivovk, E. V., Sapega, V. F., Khrebtov, A. I., Samsonenko, Yu. B., Cirlin, G. E., Ustinov, V. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxy Gallium arsenide GALLIUM ARSENIDES Low-Dimensional Systems MAGNETIC FIELDS Magnetic Materials Magnetism MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY OPTICAL PROPERTIES Physics Physics and Astronomy QUANTUM DOTS Quantum Phenomena Semiconductor Structures SUBSTRATES TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:	Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782613080058