Effects of surface oxide formation on germanium nanowire band-edge photoluminescence
The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidat...
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| Veröffentlicht in: | Applied physics letters 2013-06, Vol.102 (25) |
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| container_title | Applied physics letters |
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| creator | Minaye Hashemi, Fatemeh Sadat Thombare, Shruti Morral, Anna Fontcuberta i Brongersma, Mark L. McIntyre, Paul C. |
| description | The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface. |
| doi_str_mv | 10.1063/1.4812334 |
| format | Article |
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Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. 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Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface.</description><subject>ANNEALING</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>GERMANATES</subject><subject>GERMANIUM</subject><subject>GERMANIUM OXIDES</subject><subject>LAYERS</subject><subject>MONOCRYSTALS</subject><subject>OXIDATION</subject><subject>PASSIVATION</subject><subject>PHOTOLUMINESCENCE</subject><subject>QUANTUM WIRES</subject><subject>RECOMBINATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SURFACES</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0HAk4eteZPsbnqUUj-g4KWel3y8aSPdpCS7qP_elRYGhoGHgRlC7oEtgDXiCRZSARdCXpAZsLatBIC6JDPGmKiaZQ3X5KaUrynWEzUj27X3aIdCk6dlzF5bpOknOKQ-5V4PIUU6aYdTiGHsadQxfYeM1OjoKnQ7pMd9GtJh7EPEYjFavCVXXh8K3p19Tj5f1tvVW7X5eH1fPW8qK2o1VBo9A1gqr5hUQqJBaI3jzjglbYvgGw2OG-VlzeUSuePQtNIwa4xq6hbEnDycelMZQldsGNDubYpxWtTxiRasqSfq8UTZnErJ6LtjDr3Ovx2w7v-0DrrzaeIPDB5e7w</recordid><startdate>20130624</startdate><enddate>20130624</enddate><creator>Minaye Hashemi, Fatemeh Sadat</creator><creator>Thombare, Shruti</creator><creator>Morral, Anna Fontcuberta i</creator><creator>Brongersma, Mark L.</creator><creator>McIntyre, Paul C.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20130624</creationdate><title>Effects of surface oxide formation on germanium nanowire band-edge photoluminescence</title><author>Minaye Hashemi, Fatemeh Sadat ; Thombare, Shruti ; Morral, Anna Fontcuberta i ; Brongersma, Mark L. ; McIntyre, Paul C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-aef01198f804834ebe17bd2dbd84c7e1f6a1d2b8f45249e2d21674b0cbb865713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ANNEALING</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>GERMANATES</topic><topic>GERMANIUM</topic><topic>GERMANIUM OXIDES</topic><topic>LAYERS</topic><topic>MONOCRYSTALS</topic><topic>OXIDATION</topic><topic>PASSIVATION</topic><topic>PHOTOLUMINESCENCE</topic><topic>QUANTUM WIRES</topic><topic>RECOMBINATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SURFACES</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Minaye Hashemi, Fatemeh Sadat</creatorcontrib><creatorcontrib>Thombare, Shruti</creatorcontrib><creatorcontrib>Morral, Anna Fontcuberta i</creatorcontrib><creatorcontrib>Brongersma, Mark L.</creatorcontrib><creatorcontrib>McIntyre, Paul C.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Minaye Hashemi, Fatemeh Sadat</au><au>Thombare, Shruti</au><au>Morral, Anna Fontcuberta i</au><au>Brongersma, Mark L.</au><au>McIntyre, Paul C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of surface oxide formation on germanium nanowire band-edge photoluminescence</atitle><jtitle>Applied physics letters</jtitle><date>2013-06-24</date><risdate>2013</risdate><volume>102</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface.</abstract><cop>United States</cop><doi>10.1063/1.4812334</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2013-06, Vol.102 (25) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ANNEALING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY GERMANATES GERMANIUM GERMANIUM OXIDES LAYERS MONOCRYSTALS OXIDATION PASSIVATION PHOTOLUMINESCENCE QUANTUM WIRES RECOMBINATION SEMICONDUCTOR MATERIALS SURFACES X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Effects of surface oxide formation on germanium nanowire band-edge photoluminescence |
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