Effects of surface oxide formation on germanium nanowire band-edge photoluminescence
The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidat...
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Veröffentlicht in: | Applied physics letters 2013-06, Vol.102 (25) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4812334 |