Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidat...

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Veröffentlicht in:Applied physics letters 2013-06, Vol.102 (25)
Hauptverfasser: Minaye Hashemi, Fatemeh Sadat, Thombare, Shruti, Morral, Anna Fontcuberta i, Brongersma, Mark L., McIntyre, Paul C.
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Sprache:eng
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Zusammenfassung:The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4812334