Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2×1017 cm−3 and 3×1020 cm−3 for phosphorus and 4×1018 cm−3 to 3×1019 cm−3 for boron-doped layers, with carrier mobilities up to 90 cm2/V s.