Tuning the work function of graphene by ultraviolet irradiation

Graphene layers grown by chemical vapor deposition were, respectively, irradiated for 0, 20, 40, and 60 min by an ultraviolet light source in order to experimentally study the change in the work function of graphene. The dependences of the work function and carrier concentration upon ultraviolet irr...

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Veröffentlicht in:	Applied physics letters 2013-05, Vol.102 (18), p.183120
Hauptverfasser:	Lin, Yow-Jon, Zeng, Jian-Jhou
Format:	Artikel
Sprache:	eng
Schlagworte:	ABUNDANCE CARRIER DENSITY CARRIERS CHEMICAL VAPOR DEPOSITION CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DENSITY DESORPTION EPITAXY FERMI LEVEL FERMIONS GRAPHENE IRRADIATION LAYERS LIGHT SOURCES NANOSCIENCE AND NANOTECHNOLOGY OXYGEN PHYSICAL RADIATION EFFECTS ULTRAVIOLET RADIATION WORK FUNCTIONS
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Zusammenfassung:	Graphene layers grown by chemical vapor deposition were, respectively, irradiated for 0, 20, 40, and 60 min by an ultraviolet light source in order to experimentally study the change in the work function of graphene. The dependences of the work function and carrier concentration upon ultraviolet irradiation have been found. It is shown that ultraviolet irradiation may lead to oxygen desorption, thus reducing the hole density and work function of graphene. Based on the well-known expression for the Fermi energy of Dirac fermions, the Fermi velocity of graphene was extracted to be about 5.2 Multiplication-Sign 10{sup 5} m/s.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4804289