Homogeneous and stable p-type doping of graphene by MeV electron beam-stimulated hybridization with ZnO thin films

In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed...

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Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (5)
Hauptverfasser: Song, Wooseok, Kim, Yooseok, Hwan Kim, Sung, Youn Kim, Soo, Cha, Myoung-Jun, Song, Inkyung, Sung Jung, Dae, Jeon, Cheolho, Lim, Taekyung, Lee, Sumi, Ju, Sanghyun, Chel Choi, Won, Wook Jung, Min, An, Ki-Seok, Park, Chong-Yun
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Sprache:eng
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Zusammenfassung:In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4790161