Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm3 without generating significant crystal defects. Formation of a pn junction diode with...

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Veröffentlicht in:	Applied physics letters 2013-02, Vol.102 (5)
Hauptverfasser:	Ikeda, Akihiro, Nishi, Koji, Ikenoue, Hiroshi, Asano, Tanemasa
Format:	Artikel
Sprache:	eng
Schlagworte:	BEAMS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS DEPTH Diodes Doping Excimer lasers HALL EFFECT IRRADIATION JUNCTION DIODES KRYPTON FLUORIDE LASERS LIQUIDS MATERIALS SCIENCE PHOSPHORIC ACID Phosphorus PHOSPHORUS ADDITIONS SEMICONDUCTOR MATERIALS Silicon carbide SILICON CARBIDES
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Zusammenfassung:	Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4790621