Volmer-Weber growth of AlSb on Si(111)

Volmer-Weber growth of AlSb on Si(111)

AlSb is grown by molecular beam epitaxy. The evolution and the relaxation of the deposited AlSb layer is investigated by synchrotron-based in situ grazing incidence x-ray diffraction (GID), and the analysis of the real space distribution is performed by atomic force microscopy. AlSb forms islands wi...

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Veröffentlicht in:Applied physics letters 2013-01, Vol.102 (4)
Hauptverfasser: Proessdorf, A., Hanke, M., Jenichen, B., Braun, W., Riechert, H.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
Crystal structure
CRYSTALS
Deposition
DEPOSITS
Diffraction
DISTRIBUTION
EVOLUTION
Islands
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
Polarity
RELAXATION
Rods
SEMICONDUCTOR MATERIALS
SYNCHROTRONS
X-RAY DIFFRACTION
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Zusammenfassung:AlSb is grown by molecular beam epitaxy. The evolution and the relaxation of the deposited AlSb layer is investigated by synchrotron-based in situ grazing incidence x-ray diffraction (GID), and the analysis of the real space distribution is performed by atomic force microscopy. AlSb forms islands with (111)A polarity and {110} surface orientations with different side facets following the Volmer-Weber growth mode. GID investigations reveal facet rods originating from AlSb{110} islands. It is shown that a concentration of only 0.7% AlSb{110} oriented domains influences the diffraction pattern in such a way that additional crystal truncation rods parallel to the surface appear.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4789536