Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide
The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na 2 S and sub...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-05, Vol.47 (5), p.721-727 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 47 |
| creator | Lvova, T. V. Dunaevskii, M. S. Lebedev, M. V. Shakhmin, A. L. Sedova, I. V. Ivanov, S. V. |
| description | The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na
2
S and subsequent annealing in vacuum at 150°C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band. |
| doi_str_mv | 10.1134/S106378261305014X |
| format | Article |
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2
S and subsequent annealing in vacuum at 150°C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261305014X</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>ANNEALING ; ANTIMONY OXIDES ; AQUEOUS SOLUTIONS ; ATOMIC FORCE MICROSCOPY ; BINDING ENERGY ; CHEMISORPTION ; ELECTRONIC STRUCTURE ; ETCHING ; Fabrication ; FERMI LEVEL ; Indium ; INDIUM ANTIMONIDES ; INDIUM OXIDES ; LAYERS ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Oxides ; PASSIVATION ; PHOTOEMISSION ; Physics ; Physics and Astronomy ; SODIUM SULFIDES ; SUBSTRATES ; Sulfides ; TEMPERATURE RANGE 0400-1000 K ; Testing of Materials and Structures ; Treatment ; X-RAY PHOTOELECTRON SPECTROSCOPY ; X-ray spectroscopy</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013-05, Vol.47 (5), p.721-727</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><rights>COPYRIGHT 2013 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-73cd1ba88108c8872d207c9892e9cf17b4621ea064b07d0f5b8291dd9cbbab073</citedby><cites>FETCH-LOGICAL-c355t-73cd1ba88108c8872d207c9892e9cf17b4621ea064b07d0f5b8291dd9cbbab073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378261305014X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378261305014X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22126565$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lvova, T. V.</creatorcontrib><creatorcontrib>Dunaevskii, M. S.</creatorcontrib><creatorcontrib>Lebedev, M. V.</creatorcontrib><creatorcontrib>Shakhmin, A. L.</creatorcontrib><creatorcontrib>Sedova, I. V.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><title>Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na
2
S and subsequent annealing in vacuum at 150°C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.</description><subject>ANNEALING</subject><subject>ANTIMONY OXIDES</subject><subject>AQUEOUS SOLUTIONS</subject><subject>ATOMIC FORCE MICROSCOPY</subject><subject>BINDING ENERGY</subject><subject>CHEMISORPTION</subject><subject>ELECTRONIC STRUCTURE</subject><subject>ETCHING</subject><subject>Fabrication</subject><subject>FERMI LEVEL</subject><subject>Indium</subject><subject>INDIUM ANTIMONIDES</subject><subject>INDIUM OXIDES</subject><subject>LAYERS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Oxides</subject><subject>PASSIVATION</subject><subject>PHOTOEMISSION</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>SODIUM SULFIDES</subject><subject>SUBSTRATES</subject><subject>Sulfides</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>Testing of Materials and Structures</subject><subject>Treatment</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><subject>X-ray spectroscopy</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhosouK7-AG8FL3roOpM0aXpcFj8WFjyo4K2kaapZusnaaQX_vSnrTZAcJsw8z8A7SXKJsEDk-e0zguSFYhI5CMD87SiZIZSQybwoj6e_5Nk0P03OiLYAiErks-Rl9WF3zugu3Wsi96UHF3wa2nTtn-v0GgFuUhprGno9WEqdT_XnaMNIKYVunGCaaAqNG3eR7FrX2PPkpNUd2YvfOk9e7-9eVo_Z5ulhvVpuMsOFGLKCmwZrrRSCMkoVrGFQmFKVzJamxaLOJUOrQeY1FA20olasxKYpTV3r2OLz5OqwN9DgKjJusObDBO-tGSrGkEkhRaQWB-pdd7Zyvg0xjImvmZIHb1sX-0vOhWJCSogCHgTTB6LettW-dzvdf1cI1XTt6s-1o8MODkXWv9u-2oax9zH9P9IP5suAKQ</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Lvova, T. 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V.</creatorcontrib><creatorcontrib>Dunaevskii, M. S.</creatorcontrib><creatorcontrib>Lebedev, M. V.</creatorcontrib><creatorcontrib>Shakhmin, A. L.</creatorcontrib><creatorcontrib>Sedova, I. V.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lvova, T. V.</au><au>Dunaevskii, M. S.</au><au>Lebedev, M. V.</au><au>Shakhmin, A. L.</au><au>Sedova, I. V.</au><au>Ivanov, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2013-05-01</date><risdate>2013</risdate><volume>47</volume><issue>5</issue><spage>721</spage><epage>727</epage><pages>721-727</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na
2
S and subsequent annealing in vacuum at 150°C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S106378261305014X</doi><tpages>7</tpages></addata></record> |
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| subjects | ANNEALING ANTIMONY OXIDES AQUEOUS SOLUTIONS ATOMIC FORCE MICROSCOPY BINDING ENERGY CHEMISORPTION ELECTRONIC STRUCTURE ETCHING Fabrication FERMI LEVEL Indium INDIUM ANTIMONIDES INDIUM OXIDES LAYERS Magnetic Materials Magnetism MATERIALS SCIENCE Oxides PASSIVATION PHOTOEMISSION Physics Physics and Astronomy SODIUM SULFIDES SUBSTRATES Sulfides TEMPERATURE RANGE 0400-1000 K Testing of Materials and Structures Treatment X-RAY PHOTOELECTRON SPECTROSCOPY X-ray spectroscopy |
| title | Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide |
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