Anomalous X-ray scattering study of quantum dots embedded in MBE grown silicon/germanium multilayers

Anomalous X-ray scattering is a unique technique to determine the composition profile of quantum dots embedded in buried interfaces of multilayer-structures. Here we present the results of MBE grown Si/Ge multilayer structures on Si(001) substrates having self-assembled Ge quantum dots in its buried interfaces. We performed grazing incidence diffraction measurements of (400) reflections along with (004) diffraction profiles exhibiting super-lattice reflections at and away from the germanium K-edge. Systematic analysis of the acquired data enabled us to extract average composition and strain profiles of the quantum dots.