Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where...

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Veröffentlicht in:Journal of applied physics 2012-09, Vol.112 (6)
Hauptverfasser: Noda, T., Mano, T., Jo, M., Kawazu, T., Sakaki, H.
Format: Artikel
Sprache:eng
Schlagworte:
Beams (radiation)
Droplets
Epitaxy
Flux
GALLIUM ARSENIDES
INDIUM ARSENIDES
Indium gallium arsenides
INDIUM PHOSPHIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
Self assembly
SEMICONDUCTOR MATERIALS
SUBSTRATES
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Zusammenfassung:We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4752255